Mutiplex MTX310EW 10Gb/s 1310nm EA- Modulated Laser (Refurbished)

Mutiplex MTX310EW 10Gb/s 1310nm EA- Modulated Laser (Refurbished)

The MTX310EWB01-type electro-absorption modulated laser (EML) module consists of a multiquantum- well DFB laser device with 1310nm nominal emission wavelength and a monolithically integrated electro-absorption (EA) modulator in a 7-pin, hermetically-sealed package with a GPO connector. State-of-the-art, epoxy-free laserwelding is utilized. The laser module also contains a thermoelectric cooler and a monitor photodiode. The modules are designed for 10 Gb/s transmission rates for short, intermediate and long reach distances up to 12, 20 and 40 km respectively. The MTX310EW series modules are optimized to operate at a bit-rate of 10Gb/s for OC-192 and metro transmission with excellent reliability. The 310EW uses our high performance EML platform operating at 1310nm, where fiber dispersion is near zero. This allows the 310EW to provide superior performance and longer reach than is obtained with typical directly modulated 1310 DFB lasers. The incorporated thermoelectric cooler keeps the laser chip at a well-controlled temperature. This allows the device to operate over a case temperature range of 0 to +70 degeen.

The MTX310EW module comes with a 1.5 meter strand of single-mode fiber.

APPLICATIONS

MTX310EWB01-S1 is designed for highspeed telecom and datacom transmissions over spans up to 12 km in length in compliance with Telcordia GR-253-CORE (Issue 3) or I64.1 SR-1 specifications.

MTX310EWB01-I1 is designed for highspeed telecom and datacom transmissions over spans up to 20 km in length in compliance with Telcordia GR-253-CORE (Issue 3) IR-1 specifications. Compliance to GR-1377-CORE IR-1 specifications is also available.

MTX310EWB01-L1 is designed for highspeed telecom and datacom transmissions over spans up to 40 km in length in compliance with Telcordia GR-253-CORE (Issue 3) LR-1 specifications.

FEATURES

Industry standard 7-pin GPO package.

High-speed design optimized for modulation at 10 Gb/s. 50 Ohm input impedance match.

Integrated optical isolator.

GR-253-CORE SR-1, IR-1 and LR-1 compliant.

MTX310EWB01-S1, 310EWB01-I1 and 310EWB01-L1

Optical and Electrical Characteristics

PARAMETER SYMBOL CONDITION MIN MAX UNIT

DFB Laser:

Set temperature for laser operation Tset Temperature set for TEC 20 35 oC

Threshold current Ith At Tset, CW operation - 30 mA

Operating current Iop At Tset, BOL 40 100 mA At Tset, EOL 60 150 mA

Peak wavelength;At Tset, Iop 1290 1330 nm

Side mode suppression ratio SMSR At Tset, Iop 30 - dB

EA Modulator:

Mark offset voltage Vmark DC (on-level modulator voltage) -1.0 -0.01 V

Peak-to-peak RF drive voltage Vpp - 2.7 V

RF return loss (300 kHz to 5 GHz) S11 VEA = Vmark, 50; test system 8 - dB

RF return loss (5 to 10 GHz) S11 VEA = Vmark, 50; test system 3 - dB

Module:

Extinction ratio (310EWB01-S1) Er Vmark biased, modulated with Vpp 6 - dB

Extinction ratio (310EWB01-I1) Er Vmark biased, modulated with Vpp 6 - dB

Extinction ratio (310EWB01-L1) Er Vmark biased, modulated with Vpp 6 - dB

Monitor photodiode current Ipd At Tset, Iop 0.01 1.5 mA

Modulated fiber output Modulated output power measured by power meter

310EWB01-S1 -6 -1 dBm

310EWB01-I1 +1 +5 dBm

310EWB01-L1 +3 +7 dBm

Optical isolation - From output fiber to device, module at Tset 25 - dB

Case temperature Tcase Operating case temperature 0 70 oC

Table Notes: (1) VEA is the DC voltage applied to the modulator when the EML is not modulated.

(2) All modules are tested to pass the SONET OC-192 eye-mask criteria.

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

PARAMETER SYMBOLCONDITION MIN MAX UNIT

Laser Diode Reverse Voltage VRL CW - 2 V

Laser Diode Forward Current IFL CW - 150 mA

Optical Output Power P CW - 10 mW

Laser Chip Temperature TLD 15 40 oC

Modulator Reverse Voltage VMR - 5 V

Modulator Forward Voltage VMF - 1 V

Photodiode Reverse Voltage VRPD - 10 V

Photodiode Forward Current IFPD - 1 mA

Thermoelectric Cooler Current ITEC -1.5 1.5 A

Thermoelectric Cooler Voltage VTEC -3.3 3.3 V

Thermistor Voltage VTh - 5 V

Thermistor Current ITh - 2 mA

Operating Case Temperature Range Topr 0 +75 oC

Storage Case Temperature Range Tstg -40 +85 oC

Pin Configuration

Pin Number Description

1 Thermistor (Resistance =10k)

2 Thermistor

3 Laser Anode

4 Detector Monitor Anode

5 Detector Monitor Cathode

6 Thermoelectric Cooler (+)

7 Thermoelectric Cooler (-)

GPO RF and Case Ground (Laser Cathode)